Thermal processing system and method of using

ABSTRACT

Embodiments of the invention provide a thermal processing system and methods for uniformly heating and/or cooling a semiconductor wafer. Embodiments of the invention may be applied to provide a more uniform temperature profile when processing 300 mm and larger wafers having different curvature profiles that occur at the same and/or different points in a manufacturing cycle. Wafer curvature can be dependent on the number and thickness of the metal layers.

FIELD OF THE INVENTION

The invention relates to wafer processing, and more particularly, to athermal processing system and method for using the same.

BACKGROUND OF THE INVENTION

Minimizing defects during wafer processing will continue to be acritical path to attaining cost effective manufacturing of advancedsemiconductor devices. Hard particles can block etch processes causingelectrical “open” or “short” in the circuit. In lesser size and if luckywith the location on the device, the hard particle may only create fatalperturbations in the active features' critical dimension (line/space orcontact hole)

The required gate level defect density for 15 nm gate technology isgoing to be approximately 0.01/cm**2 at 10 nm in size per theInternational Technology Roadmap for Semiconductors (ITRS) 2005 roadmap.Prior art thermal processing procedures are not adequate to meet theserequirements, and it is anticipated that an improved thermal processingsystem and associated procedures will be required to meet the futuredevice defect densities.

SUMMARY OF THE INVENTION

Embodiments of the invention provide a thermal processing system andmethods for heating and/or cooling a semiconductor wafer. Embodiments ofthe invention may be applied to thermally processing wafers at differentpoints in a manufacturing cycle, and the wafers can include one or moremetal layers.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the invention and many of the attendantadvantages thereof will become readily apparent with reference to thefollowing detailed description, particularly when considered inconjunction with the accompanying drawings, in which:

FIG. 1 is a top view of a schematic diagram of a coating/developingsystem for use in accordance with embodiments of the invention;

FIG. 2 is a front view of the coating/developing system of FIG. 1;

FIG. 3 is a partially cut-away back view of the coating/developingsystem of FIG. 1, as taken along line 3-3;

FIG. 4 a and FIG. 4 b show exemplary block diagrams of a thermalprocessing system in accordance with embodiments of the invention;

FIG. 5 a and FIG. 5 b show additional exemplary block diagrams of athermal processing system in accordance with embodiments of theinvention;

FIG. 6 a and FIG. 6 b show exemplary block diagrams of another thermalprocessing system in accordance with embodiments of the invention;

FIG. 7 a and FIG. 7 b show exemplary block diagrams of another thermalprocessing system in accordance with additional embodiments of theinvention; and

FIG. 8 illustrates a simplified process flow diagram for a method forusing a thermal processing system according to embodiments of theinvention.

DETAILED DESCRIPTION OF SEVERAL EMBODIMENTS

Embodiments of the invention provide a method and processing system forcontrolling and rapidly lowering the temperature of a hotplate used forsupporting and heating-treating wafers. Embodiments of the invention maybe applied to heat-treating of resist-coated wafers with high waferthroughput. The terms “wafer” and “substrate” are used interchangeablyherein to refer to a thin slice of material, such as a silicon crystalor glass material, upon which microcircuits are constructed, for exampleby diffusion, deposition, and etching of various materials.

With reference to FIGS. 1-3, a coating/developing processing system 1has a load/unload section 10, a process section 11, and an interfacesection 12. The load/unload section 10 has a cassette table 20 on whichcassettes (CR) 13, each storing a plurality of semiconductor wafers (W)14 (e.g., 25), are loaded and unloaded from the processing system 1. Theprocess section 11 has various single wafer processing units forprocessing wafers 14 sequentially one by one. These processing units arearranged in predetermined positions of multiple stages, for example,within first (G1), second (G2), third (G3), fourth (G4) and fifth (G5)multiple-stage process unit groups 31, 32, 33, 34, 35. The interfacesection 12 is interposed between the process section 11 and one or morelight exposure systems (not shown), and is configured to transfer resistcoated wafers between the process section 11 and the one or more lightexposure systems. The one or more light exposure systems can include aresist patterning system such as a photolithography tool that transfersthe image of a circuit or a component from a mask or onto a resist onthe wafer surface.

The coating/developing processing system 1 also includes a CD metrologysystem for obtaining CD metrology data from test areas on the patternedwafers. The CD metrology system may be located within the processingsystem 1, for example at one of the multiple-stage process unit groups31, 32, 33, 34, 35. The CD metrology system can be a light scatteringsystem such as an Optical Digital Profilometry (ODP) system.

The ODP system may include a scatterometer, incorporating beam profileellipsometry (ellipsometer), and beam profile reflectometry(reflectometer), commercially available from Therma-Wave, Inc. (1250Reliance Way, Fremont, Calif. 94539) or Nanometrics, Inc. (1550 BuckeyeDrive, Milpitas, Calif. 95035). ODP software is available from TimbreTechnologies Inc. (2953 Bunker Hill Lane, Santa Clara, Calif. 95054).

When performing optical metrology, such as Scatterometry, a structure ona substrate, such as a semiconductor wafer or flat panel, is illuminatedwith electromagnetic (EM) radiation, and a diffracted signal receivedfrom the structure is utilized to reconstruct the profile of thestructure. The structure may include a periodic structure, or anon-periodic structure. Additionally, the structure may include anoperating structure on the substrate (i.e., a via, or contact hole, oran interconnect line or trench, or a feature formed in a mask layerassociated therewith), or the structure may include a periodic gratingor non-periodic grating formed proximate to an operating structureformed on a substrate. For example, the periodic grating can be formedadjacent a transistor formed on the substrate. Alternatively, theperiodic grating can be formed in an area of the transistor that doesnot interfere with the operation of the transistor. The profile of theperiodic grating is obtained to determine whether the periodic grating,and by extension the operating structure adjacent the periodic grating,has been fabricated according to specifications.

Still referring to FIGS. 1-3, a plurality of projections 20 a are formedon the cassette table 20. A plurality of cassettes 13 are each orientedrelative to the process section 11 by these projections 20 a. Each ofthe cassettes 13 mounted on the cassette table 20 has a load/unloadopening 9 facing the process section 11.

The load/unload section 10 includes a first sub-arm mechanism 21 that isresponsible for loading/unloading the wafer W into/from each cassette13. The first sub-arm mechanism 21 has a holder portion for holding thewafer 14, a back and forth moving mechanism (not shown) for moving theholder portion back and forth, an X-axis moving mechanism (not shown)for moving the holder portion in an X-axis direction, a Z-axis movingmechanism (not shown) for moving the holder portion in a Z-axisdirection, and a θ (theta) rotation mechanism (not shown) for rotatingthe holder portion around the Z-axis. The first sub-arm mechanism 21 cangain access to an alignment unit (ALIM) 41 and an extension unit (EXT)42 belonging to a third (G3) process unit group 33, as further describedbelow.

With specific reference to FIG. 3, a main arm mechanism 22 is liftablyarranged at the center of the process section 11. The process unitsG1-G5 are arranged around the main arm mechanism 22. The main armmechanism 22 is arranged within a cylindrical supporting body 49 and hasa liftable wafer transporting system 46. The cylindrical supporting body49 is connected to a driving shaft of a motor (not shown). The drivingshaft may be rotated about the Z-axis in synchronism with the wafertransporting system 46 by an angle of θ. The wafer transporting system46 has a plurality of holder portions 48 movable in a front and reardirection of a transfer base table 47.

Units belonging to first (G1) and second (G2) process unit groups 31,32, are arranged at the front portion 2 of the coating/developingprocessing system 1. Units belonging to the third (G3) process unitgroup 33 are arranged next to the load/unload section 10. Unitsbelonging to a fourth (G4) process unit group 34 are arranged next tothe interface section 12. Units belonging to a fifth (G5) process unitgroup 35 are arranged in a back portion 3 of the processing system 1.

With reference to FIG. 2, the first (G1) process unit group 31 has twospinner-type process units for applying a predetermined treatment to thewafer 14 mounted on a spin chuck (not shown) within the cup (CP) 38. Inthe first (G1) process unit group 31, for example, a resist coating unit(COT) 36 and a developing unit (DEV) 37 are stacked in two stagessequentially from the bottom. In the second (G2) process unit group 32,two spinner type process units such as a resist coating unit (COT) 36and a developing unit (DEV) 37, are stacked in two stages sequentiallyfrom the bottom. In an exemplary embodiment, the resist coating unit(COT) 36 is set at a lower stage than the developing unit (DEV) 37because a discharge line (not shown) for the resist waste solution isdesired to be shorter than a developing waste solution for the reasonthat the resist waste solution is more difficult to discharge than thedeveloping waste solution. However, if necessary, the resist coatingunit (COT) 36 may be arranged at an upper stage relative to thedeveloping unit (DEV) 37.

With reference to FIG. 3, the third (G3) process unit group 33 has acooling unit (COL) 39, an alignment unit (ALIM) 41, an adhesion unit(AD) 40, an extension unit (EXT) 42, two prebaking units (PREBAKE) 43,and two postbaking units (POBAKE) 44, which are stacked sequentiallyfrom the bottom.

Similarly, the fourth (G4) process unit group 34 has a cooling unit(COL) 39, an extension-cooling unit (EXTCOL) 45, an extension unit (EXT)42, another cooling unit (COL) 39, two prebaking units (PREBAKE) 43 andtwo postbaking units (POBAKE) 44 stacked sequentially from the bottom.Although, only two prebaking units 43 and only two postbaking units 44are shown, G3 and G4 may contain any number of prebaking units 43 andpostbaking units 44. Furthermore, any or all of the prebaking units 43and postbaking units 44 may be configured to perform post exposure bake(PEB), post application bake (PAB), and post developing bake (PDB)processes.

In an exemplary embodiment, the cooling unit (COL) 39 and the extensioncooling unit (EXTCOL) 45, to be operated at low processing temperatures,are arranged at lower stages, and the prebaking unit (PREBAKE) 43, thepostbaking unit (POBAKE) 44 and the adhesion unit (AD) 40, to beoperated at high temperatures, are arranged at the upper stages. Withthis arrangement, thermal interference between units may be reduced.Alternatively, these units may have different arrangements.

At the front side of the interface section 12, a movable pick-upcassette (PCR) 15 and a non-movable buffer cassette (BR) 16 are arrangedin two stages. At the backside of the interface section 12, a peripherallight exposure system 23 is arranged. The peripheral light exposuresystem 23 can contain a lithography tool. Alternatively, the lithographytool and the ODP system may be remote to and cooperatively coupled tothe coating/developing processing system 1. At the center portion of theinterface section 12, a second sub-arm mechanism 24 is provided, whichis movable independently in the X and Z directions, and which is capableof gaining access to both cassettes (PCR) 15 and (BR) 16 and theperipheral light exposure system 23. In addition, the second sub-armmechanism 24 is rotatable around the Z-axis by an angle of θ and isdesigned to be able to gain access not only to the extension unit (EXT)42 located in the fourth (G4) process unit group 34 but also to a wafertransfer table (not shown) near a remote light exposure system (notshown).

In the processing system 1, the fifth (G5) process unit group 35 may bearranged at the back portion 3 of the backside of the main arm mechanism22. The fifth (G5) process unit group 35 may be slidably shifted in theY-axis direction along a guide rail 25. Since the fifth (G5) processunit group 35 may be shifted as mentioned, maintenance operation may beapplied to the main arm mechanism 22 easily from the backside.

The prebaking unit (PREBAKE) 43, the postbaking unit (POBAKE) 44, andthe adhesion unit (AD) 40 each comprise a heat treatment system in whichwafers 14 are heated to temperatures above room temperature. In someembodiments, the thermal processing systems described herein can beconfigured for use in processing system 1.

FIG. 4 a and FIG. 4 b show exemplary block diagrams of a thermalprocessing system in accordance with embodiments of the invention. Inthe illustrated embodiment, simplified block diagrams are used forillustration purposes and a simplified thermal processing system 400 isshown that comprises a processing chamber 405, a process gas supplysystem 410, an evacuation system 420, a support ring 430, one or morevacuum systems (440 a, 440 b), one or more thermal control systems (450a, 450 b), a base plate 460, a plurality of support pins 465, aplurality of sensor pins 466, and a plurality of lift pins 467.Alternatively, lift pins 467 may not be required. In addition, thethermal processing system 400 can include one or more controllers 490that can be used to operate and maintain the thermal processing system400.

The thermal processing system 400 can include one or more process gassupply systems 410 coupled to the process space 406 in the processingchamber 405 using one or more flow control elements 415. For example,the flow control elements 415 may comprise one or more valves (notshown) and/or one or more input sensors (not shown). Those skilled inthe art will recognize that one or more nozzles, one or more showerheaddevices, and/or one or more valves may be used for controlling flow inand/or out of the process space 406, and one or more input sensors maybe used for determining the processing state for the thermal processingsystem 400. In addition, one or more of the flow control elements 415may comprise flexible hoses. One or more of the controllers 490 can becoupled to one or more process gas supply systems 410 and the associatedflow control elements 415. The process gas supply systems 410 and theassociated flow control elements 415 can be used to provide processgases and/or liquids to process space 406. One or more of thecontrollers 490 can be used to control the types of process gases in theprocess space during operational procedures or maintenance procedures.

The thermal processing system 400 can include one or more evacuationsystems 420 coupled to the process space 406 in the processing chamber405 using one or more evacuation ports 425. For example, the exhaustport 425 may comprise one or more valves (not shown) and/or one or moreexhaust sensors (not shown). Those skilled in the art will recognizethat one or more pumps and one or more valves may be used forcontrolling flow in and/or out of the process space 406, and one or moreexhaust sensors may be used for determining the processing state for thethermal processing system 400. In addition, one or more of theevacuation ports 425 may be coupled to an evacuation unit (not shown)and/or an exhaust system (not shown) using flexible hoses. Evacuationport 425 can be used to exhaust cleaning and/or other processing gassesthat must be removed from the process space 406. Port diameter can rangefrom approximately 1 mm to approximately 10 mm.

One or more of the controllers 490 can be coupled to the evacuationsystems 420 and the associated evacuation ports 425. The evacuationsystems 420 and the associated evacuation ports 425 can be used toremove process gasses from the process space 406. One or more of thecontrollers 490 can control the process pressure and/or types of processgases in the process space 406 during operational procedures ormaintenance procedures using one or more of the evacuation systems 420and the associated evacuation ports 425.

The support ring 430 can comprise a plurality of vacuum holding elements(432 a and 432 b) and each vacuum holding element can comprise one ormore vacuum ports (435 a, 435 b) and one or more holding sensors (436 a,436 b). The holding force (vacuum pressure) in each of the vacuumholding elements (432 a and 432 b) can be individually measured andcontrolled. The inside diameter of the support ring 430 can vary fromapproximately 290 mm to approximately 298 mm, the outside diameter ofthe support ring 430 can vary from approximately 305 mm to approximately315 mm. The diameter of the vacuum ports (435 a, 435 b) can vary fromapproximately 2 mm to approximately 5 mm. The length of the sensor pins466 can vary from approximately 2 mm to approximately 10 mm, thediameter of the support pins can vary from approximately 0.15 mm toapproximately 1.0 mm.

The support ring 430 can comprise one or more heating elements 433 thatcan be used to independently control the temperature at the wafer edge.For example, the wafer edge temperature can be independently controlledto eliminate or control the formation of an edge bead.

The base plate 460 can be coupled to an interior surface of theprocessing chamber 405, and the base plate 460 can include one or moretemperature control elements 462 that can be used to quickly raise orlower the temperature of the base plate 460.

The thermal processing system 400 can include a plurality of supportspins 465 and a plurality of sensor pins 466 that can be used to supportthe wafer 401. The plurality of support pins 465 and the plurality ofsensor pins 466 can be coupled to the base plate 460. In one example, acircular configuration may be used. In various embodiments, the sensorpins 466 can include contact sensors, pressure sensors, or temperaturesensors, or any combination thereof. One or more of the controllers 490can be coupled to one or more of the support pins 465 and one or more ofthe sensor pins 466. When the wafer is positioned, the sensor pins 466can be used to determine a wafer curvature model for the wafer, and thewafer curvature model can be used to determine the number, the location,and the activation times of one or more of the vacuum holding elements(432 a and 432 b).

The length of the support pins 465 can vary from approximately 2 mm toapproximately 10 mm, the diameter of the support pins can vary fromapproximately 0.15 mm to approximately 1.0 mm. The length of the sensorpins 466 can vary from approximately 2 mm to approximately 10 mm, thediameter of the support pins can vary from approximately 0.15 mm toapproximately 1.0 mm.

In some examples, the base plate 460 and the support pins 465 can beconfigured to allow the support pins 465 to move in a verticaldirection, and/or the base plate and the sensor pins 466 can beconfigured to allow the sensor pins 466 to move in a vertical direction.For example, the amount of pin movement can be used to determine wafercurvature.

The thermal processing system 400 can include two vacuum systems (440 aand 440 b) that can be coupled to the support ring 430 in differenthalves to provide a holding means for the wafer 401. Alternatively,other holding means may be provided. A first vacuum system 440 a can becoupled to a first distribution module 445 a using a first vacuumcoupling element 441 a. The first distribution module 445 a can becoupled to a first set of vacuum holding elements 432 a using one ormore first control elements 446 a. A second vacuum system 440 b can becoupled to a second distribution module 445 b using a second vacuumcoupling element 441 b. The second distribution module 445 b can becoupled to a second set of vacuum holding elements 432 b using one ormore second control elements 446 b. Alternatively, separate vacuumsystems may not be required.

The thermal processing system 400 can include a gas injection system 480coupled to the processing chamber 405 and the controller 490. The gasinjection system 480 can be configured for exposing the support ring430, the base plate 460, the support pins 465, the sensor pins 466,and/or the lift pins 467 to an inert gas stream for rapidly coolingthese components when a wafer 401 is not present in the processingchamber 405. For example, the inert gas can include argon (Ar) ornitrogen (N₂).

One or more of the controllers 490 can be coupled to the first vacuumsystem 440 a, the first vacuum coupling elements 441 a, the firstcontrol elements 446 a, or the first set of vacuum holding elements 432a, or any combination thereof, and one or more of the controllers 490can be coupled to the second vacuum system 440 b, the second vacuumcoupling elements 441 b, the second control elements 446 b, or thesecond set of vacuum holding elements 432 b, or any combination thereof.In this manner, one or more of the first set of vacuum holding elements432 a and/or one or more of the second set of vacuum holding elements432 b can be used to hold the wafer 401 using vacuum techniques. Controlprocedures can be performed to determine which vacuum holding elementsare being used during operational procedures or maintenance procedures.

In some procedures, all of the vacuum holding elements (432 a and 432 b)can be activated when a wafer 401 is positioned above the support ring430 using the lift pins 467. When the wafer is lowered onto the supportring 430, one or more of the vacuum holding elements (432 a and 432 b)can provide a holding force to the backside of the wafer. Whensubstantially all of the vacuum holding elements (432 a and 432 b) areproviding substantially the same force to the backside of the wafer, afirst wafer flatness state can be established, and a first wafercurvature model can be determined for a “flat” wafer. For example, whensubstantially all of the holding sensors (436 a, 436 b) are measuringsubstantially the same data, the first wafer flatness state can beestablished, and the first wafer curvature model can be determined for a“flat” wafer. When one or more of the vacuum holding elements (432 a and432 b) are not providing substantially the same force to the back sideof the wafer, other wafer flatness states can be established, and otherwafer curvature models can be determined for a “non-uniform” wafer. Forexample, when one or more of the holding sensors (436 a, 436 b) are notmeasuring substantially the same data, the other wafer flatness statescan be established, and the other wafer curvature models can bedetermined for the “non-flat” wafer.

In other procedures, the other steps can be performed. In a first step,a first number of the vacuum holding elements (432 a and 432 b) can beactivated when a wafer is positioned above the support ring 430 usingthe lift pins 467. For example, the first number can be determined usinga predicted wafer curvature model. In a second step, a wafer can belowered onto the support ring 430, and one or more of the first numberof vacuum holding elements (432 a and 432 b) can provide a holding forceto the backside of the wafer. In the third step, one or more of thefirst number of vacuum holding elements (432 a and 432 b) can provide afirst total holding force to the backside of the wafer, a first waferflatness state and/or a first wafer curvature model can be determinedfor a “partially held” wafer. For example, when one or more of the firstnumber of holding sensors (436 a, 436 b) are measuring substantially thesame data, the first wafer flatness state can be established for the“partially held” wafer, and the first wafer curvature model can bedetermined for the “partially held” wafer. In a fourth step, a newnumber of the vacuum holding elements (432 a and 432 b) can beactivated, and the new number can be determined using the first wafercurvature model. In a fifth step, one or more of the new number ofvacuum holding elements (432 a and 432 b) can provide a new totalholding force to the back side of the wafer, a new wafer flatness stateand/or a new wafer curvature model can be determined using the new totalholding force. For example, when one or more of the new number ofholding sensors (436 a, 436 b) are measuring data, the new wafercurvature model can be determined for the “partially held” wafer. In asixth step, the new wafer flatness state can be compared to a flatnesslimit. Then, the fourth, fifth, and sixth steps can be repeated a numberof times if the flatness limit is not met and the wafer can be thermallyprocessed if the flatness limit is met. One or more corrective actionscan be performed, when the number is exceeded.

When one or more of the vacuum holding elements (432 a and 432 b) areproviding substantially the same force to the back side of the wafer, auniform thermal processing procedure can be performed on the wafer thatcan be determined using uniform wafer curvature model data and/oruniform wafer flatness state wafer. In addition, measured data from oneor more of the holding sensors (436 a, 436 b) can be used. When one ormore of the vacuum holding elements (432 a and 432 b) are not providingsubstantially the same force to the back side of the wafer, anon-uniform thermal processing procedure can be performed on the waferthat can be determined using non-uniform wafer curvature model dataand/or non-uniform wafer flatness state wafer. In addition, measureddata from one or more of the holding sensors (436 a, 436 b) can be used.

In some exemplary configurations, the vacuum coupling elements (441 aand 441 b) can include rectangular, flared, and/or cylindrical flowchannels, and the vacuum coupling elements (441 a and 441 b) can flowcontrol and/or measurement devices (not shown).

The thermal processing system 400 can include two thermal controlsystems (450 a and 450 b) that can be coupled to the thermal controlspace 402 inside the support ring 430 using a plurality of access ports431 through the support ring 430 and can provide a temperature controlmeans for the backside of the wafer 401. Alternatively, additionalthermal control systems may be required.

A first thermal control systems 450 a can be coupled to a first thermaldistribution element 455 a using a first supply element 451 a, and thefirst thermal distribution element 455 a can be coupled to a pluralityof first temperature control flow ports 456 a. A second thermal controlsystems 450 b can be coupled to a second thermal distribution element455 b using a second supply element 451 b, and the second thermaldistribution element 455 b can be coupled to a plurality of secondtemperature control flow ports 456 b. When required, supply elements(451 a and 451 b), thermal distribution elements (455 a and 455 b),and/or temperature control flow ports (456 a and 456 b), can includecontrol and measurement devices (not shown). Alternatively, otherthermal control means may be provided.

In some embodiments, a directed flow 459 can be established between oneor more of the first temperature control flow ports 456 a and one ormore of the second temperature control flow ports 456 b to provide atemperature control means for the backside of the wafer 401. One or moreof the first temperature control flow ports 456 a can provide one ormore thermal control gasses and/or liquids to the process space 406 andthe control space 402 beneath the wafer when a thermal processingprocedure is being performed. In addition, one or more of the secondtemperature control flow ports 456 b can be used to remove one or morethermal control gasses and/or liquids from the process space 406 and thecontrol space 402 beneath the wafer when a thermal processing procedureis being performed. Alternatively, other directed flows may be provided.

One or more of the controllers 490 can be coupled to the first thermalcontrol systems 450 a, the first supply elements 451 a, the firstthermal distribution element 455 a, or the first temperature controlflow ports 456 a, or any combination thereof, and one or more of thecontrollers 490 can be coupled to the second thermal control systems 450b, the second supply elements 451 b, the second thermal distributionelement 455 b, or the second temperature control flow ports 456 b, orany combination thereof. In this manner, one or more of the firsttemperature control flow ports 456 a and/or one or more of the secondtemperature control flow ports 456 b can be used to heat the wafer 401during thermal processing. Control procedures can be performed todetermine which flow ports are being used during operational proceduresor maintenance procedures.

In some procedures, a first set of the first temperature control flowports 456 a and/or a second set of the second temperature control flowports 456 a can be activated when a wafer is held on the support ring430 using the vacuum holding elements (432 a and 432 b). When the waferis held by the support ring, one or more of the vacuum holding elements(432 a and 432 b) can provide a holding force to the backside of thewafer. When substantially all of the vacuum holding elements (432 a and432 b) are providing substantially the same force to the backside of thewafer, a first wafer flatness state can be established, and a firstthermal profile can be determined for a “flat” wafer using a first wafercurvature model. In addition, when substantially all of the holdingsensors (436 a, 436 b) are measuring substantially the same data, thewafer can be thermally processed as a “flat” wafer. When one or more ofthe vacuum holding elements (432 a and 432 b) are not providingsubstantially the same force to the back side of the wafer, other waferflatness states can be established, and other thermal profiles can bedetermined for a “non-uniform” wafer. In addition, when one or more ofthe holding sensors (436 a, 436 b) are not measuring substantially thesame data, the wafer can be thermally processed as a “non-flat” wafer.

In some exemplary procedures, a first number of the temperature controlflow ports (456 a and 456 b) can be activated when a wafer is held bythe support ring 430, and a first directed flow can be established tothe backside of the wafer. For example, the first number of activatedports can be determined using one or more wafer curvature models. In asecond step, temperature profile can be determined for the wafer usingone or more of the sensor pins 466 and/or one or more of the lift pins467 coupled to the backside of the wafer. In the third step, thetemperature profile can be compared to one or more limits and a firstthermal uniformity map can be established for the wafer. In a fourthstep, a new directed flow can be determined and the new directed flowcan be determined using the first thermal uniformity map. In a fifthstep, the new directed flow can be established, a new number of thetemperature control flow ports (456 a and 456 b) can be activated, and anew thermal uniformity map can be determined. For example, when one ormore of the sensor pins 466 and/or one or more of the lift pins 467 aremeasuring new data, the new thermal uniformity map can be determinedusing the new data. In a sixth step, the new thermal uniformity map canbe compared to accuracy limits. Then, the fourth, fifth, and sixth stepscan be repeated a number of times if the accuracy limits are not met andthe wafer can be removed from the thermal processing system if theaccuracy limits are met. One or more corrective actions can beperformed, when a number of retries is exceeded.

In other embodiments, one or more of the evacuation systems 420 can beused to remove one or more thermal control gasses and/or liquids fromthe control space 402 beneath the wafer when a thermal processingprocedure is being performed.

In some examples, one or more of the thermal distribution elements (455a and 455 b) can be coupled to the control space 402 through the lowerportion of the support ring. Alternatively, one or more of the thermaldistribution elements (455 a and 455 b) can be coupled to the controlspace 402 through another portion of the support ring. For example, thesupply elements (451 a and 451 b), the thermal distribution elements(455 a and 455 b), and/or the temperature control flow ports (456 a and456 b) can include rectangular, flared, and/or cylindrical flowchannels.

The processing chamber 405 can include a wafer transfer port 409 thatcan be opened during wafer transfer procedures and closed during waferprocessing. In addition, the processing chamber 405 can include a one ormore measurement subsystems 408 that can be configured to providemeasurement data for the processing chamber 405 and/or the wafer 401.

FIG. 5 a and FIG. 5 b show additional exemplary block diagrams of athermal processing system in accordance with embodiments of theinvention. In the illustrated embodiment, simplified block diagrams areused for illustration purposes and a simplified thermal processingsystem 500 is shown that comprises a processing chamber 505, a processgas supply system 510, an evacuation system 520, a first support ring530, a second support ring 570, one or more vacuum systems (540 a, 540b), one or more thermal control systems (550 a, 550 b), a base plate560, a plurality of support pins 565, a plurality of sensor pins 566,and a plurality of lift pins 567. Alternatively, lift pins 567 may notbe required. In addition, the thermal processing system 500 can includeone or more controllers 590 that can be used to operate and maintain thethermal processing system 500.

The thermal processing system 500 can include one or more process gassupply systems 510 coupled to the process space 506 in the processingchamber 505 using one or more flow control elements 515. For example,the flow control elements 515 may comprise one or more valves (notshown) and/or one or more input sensors (not shown). Those skilled inthe art will recognize that one or more nozzles, one or more showerheaddevices, and/or one or more valves may be used for controlling flow inand/or out of the process space 506, and one or more input sensors maybe used for determining the processing state for the thermal processingsystem 500. In addition, one or more of the flow control elements 515may comprise flexible hoses. One or more of the controllers 590 can becoupled to one or more process gas supply systems 510 and the associatedflow control elements 515. The process gas supply systems 510 and theassociated flow control elements 515 can be used to provide processgasses and/or liquids to process space 506. One or more of thecontrollers 590 can be used to control the types of process gases in theprocess space during operational procedures or maintenance procedures.

The thermal processing system 500 can include one or more evacuationsystems 520 coupled to the process space 506 in the processing chamber505 using one or more evacuation ports 525. For example, the exhaustport 525 may comprise one or more valves (not shown) and/or one or moreexhaust sensors (not shown). Those skilled in the art will recognizethat one or more pumps and one or more valves may be used forcontrolling flow in and/or out of the process space 506, and one or moreexhaust sensors may be used for determining the processing state for thethermal processing system 500. In addition, one or more of theevacuation ports 525 may be coupled to an evacuation unit (not shown)and/or an exhaust system (not shown) using flexible hoses. Evacuationport 525 can be used to exhaust cleaning and/or other processing gassesthat must be removed from the process space 506. Port diameter can rangefrom approximately 1 mm to approximately 10 mm.

The thermal processing system 500 can include a gas injection system 580coupled to the processing chamber 505 and the controller 590. The gasinjection system 580 can be configured for exposing the first supportring 530, the base plate 560, the support pins 565, the sensor pins 566,and/or the lift pins 567 to an inert gas stream for rapidly coolingthese components when a wafer 501 is not present in the processingchamber 505. For example, the inert gas can include argon (Ar) ornitrogen (N₂).

One or more of the controllers 590 can be coupled to the evacuationsystems 520 and the associated evacuation ports 525. The evacuationsystems 520 and the associated evacuation ports 525 can be used toremove process gasses from the process space 506. One or more of thecontrollers 590 can control the process pressure and/or types of processgases in the process space during operational procedures or maintenanceprocedures using one or more of the evacuation systems 520 and theassociated evacuation ports 525.

The first support ring 530 can comprise a plurality of vacuum holdingelements (532 a and 532 b) and each vacuum holding element can compriseone or more vacuum ports (535 a, 535 b) and one or more holding sensors(536 a, 536 b). The holding force (vacuum pressure) in each of thevacuum holding elements (532 a and 532 b) can be individually measuredand controlled. The inside diameter of the first support ring 530 canvary from approximately 290 mm to approximately 298 mm, the outsidediameter of the support ring 530 can vary from approximately 305 mm toapproximately 315 mm. The diameter of the vacuum ports (535 a, 535 b)can vary from approximately 2 mm to approximately 5 mm. The length ofthe sensor pins 566 can vary from approximately 2 mm to approximately 10mm, the diameter of the support pins can vary from approximately 0.15 mmto approximately 1.0 mm.

The first support ring 530 can comprise one or more heating elements 533that can be used to independently control the temperature at the waferedge. For example, the wafer edge temperature can be independentlycontrolled to eliminate or control the formation of an edge bead.

The second support ring 570 can comprise a second number of vacuum ports575 and one or more third holding sensors 574. The holding force (vacuumpressure) in the second support ring 570 can be individually measuredand controlled. The inside diameter 572 of the second support ring 570can vary from approximately 4 mm to approximately 6 mm, the outsidediameter 571 of the second support ring 570 can vary from approximately6 mm to approximately 8 mm. The diameter of the vacuum ports 575 canvary from approximately 2 mm to approximately 5 mm. The height of thesecond support ring 570 can vary from approximately 2 mm toapproximately 10 mm.

The base plate 560 can be coupled to an interior surface of theprocessing chamber 505, and the base plate 560 can include one or moretemperature control elements 562 that can be used to quickly raise orlower the temperature of the base plate 560.

The thermal processing system 500 can include a plurality of supportspins 565 and a plurality of sensor pins 566 that can be used to supportthe wafer 501. The plurality of support pins 565 and the plurality ofsensor pins 566 can be coupled to the base plate 560. In one example, arectangular configuration may be used. In various embodiments, thesensor pins 566 can include contact sensors, pressure sensors, ortemperature sensors, or any combination thereof. One or more of thecontrollers 590 can be coupled to one or more of the support pins 565and one or more of the sensor pins 566. The sensor pins 566 can be usedto determine a wafer curvature model for the wafer when the wafer ispositioned, and the wafer curvature model can be used to determine thenumber, the location, and the activation times of one or more of thevacuum holding elements (532 a and 532 b).

The length of the support pins 565 can vary from approximately 2 mm toapproximately 10 mm, the diameter of the support pins can vary fromapproximately 0.15 mm to approximately 1.0 mm. The length of the sensorpins 566 can vary from approximately 2 mm to approximately 10 mm, thediameter of the support pins can vary from approximately 0.15 mm toapproximately 1.0 mm.

In some examples, the base plate and the support pins 565 can beconfigured to allow the support pins 565 to move in a verticaldirection, and/or the base plate and the sensor pins 566 can beconfigured to allow the sensor pins 566 to move in a vertical direction.For example, the amount of pin movement can be used to determine wafercurvature.

The thermal processing system 500 can include two vacuum systems (540 aand 540 b) that can be coupled to the first support ring 530 indifferent halves to provide a holding means for the wafer 501.Alternatively, other holding means may be provided. A first vacuumsystem 540 a can be coupled to a first distribution module 545 a using afirst vacuum coupling element 541 a. The first distribution module 545 acan be coupled to a first set of vacuum holding elements 532 a using oneor more first control elements 546 a. A second vacuum system 540 b canbe coupled to a second distribution module 545 b using a second vacuumcoupling element 541 b. The second distribution module 545 b can becoupled to a second set of vacuum holding elements 532 b using one ormore second control elements 546 b. Alternatively, separate vacuumsystems may not be required.

In some embodiments, the thermal processing system 500 can include athird vacuum system 540 c that can be coupled to the second support ring570 located in the center portion, and the second support ring 570 canprovide additional holding means for the wafer 501. Alternatively, othersupport rings may be provided. The third vacuum system 540 c can becoupled to a third distribution element 577 using a third vacuumcoupling element 541 c, and the third distribution element 577 can becoupled to the second support ring 570. Alternatively, separate vacuumsystems may not be required.

One or more of the controllers 590 can be coupled to the first vacuumsystem 540 a, the first vacuum coupling elements 541 a, the firstcontrol elements 546 a, or the first set of vacuum holding elements 532a, or any combination thereof, and one or more of the controllers 590can be coupled to the second vacuum system 540 b, the second vacuumcoupling elements 541 b, the second control elements 546 b, or thesecond set of vacuum holding elements 532 b, or any combination thereof.In this manner, one or more of the first set of vacuum holding elements532 a and/or one or more of the second set of vacuum holding elements532 b can be used to hold the wafer 501 using vacuum techniques. Controlprocedures can be performed to determine which vacuum holding elementsare being used during operational procedures or maintenance procedures.

In some procedures, all of the vacuum ports (535 a, 535 b) in the firstsupport ring 530 and all of the vacuum ports 575 in the second supportring 570 can be activated when a wafer is positioned above the firstsupport ring 530 using the lift pins 567. When the wafer is lowered ontothe support ring, one or more of the vacuum ports (535 a, 535 b, and575) can provide a holding force to the backside of the wafer. Whensubstantially all of the vacuum ports (535 a, 535 b, and 575) areproviding substantially the same force to the backside of the wafer, afirst wafer flatness state can be established, and a first wafercurvature model can be determined for a “flat” wafer. For example, whensubstantially all of the holding sensors (536 a, 536 b, and 574) aremeasuring substantially the same data, the first wafer flatness statecan be established, and the first wafer curvature model can bedetermined for a “flat” wafer. When one or more of the vacuum ports (535a, 535 b, and 575) are not providing substantially the same force to theback side of the wafer, other wafer flatness states can be established,and other wafer curvature models can be determined for a “non-uniform”wafer. For example, when one or more of the holding sensors (536 a, 536b, and 574) are not measuring substantially the same data, the otherwafer flatness states can be established, and the other wafer curvaturemodels can be determined for the “non-flat” wafer.

In other procedures, the other steps can be performed. In a first step,a first number of the vacuum ports (535 a, 535 b) in the first supportring 530 and a second number of the vacuum ports 575 in the secondsupport ring 570 can be activated when a wafer is positioned above thesupport rings (530 and 570) using the lift pins 567. For example, thefirst and second numbers can be determined using a predicted wafercurvature model. In a second step, a wafer can be lowered onto thesupport rings (530 and 570), and one or more of the vacuum ports (535 a,535 b, and 575) can provide a holding force to the backside of thewafer. In the third step, the data from one or more of the holdingsensors (536 a, 536 b, and 574) can be used to determine a first totalholding force, a first wafer flatness state, and/or a first wafercurvature for a “partially held” wafer. In a fourth step, a new numberof vacuum ports (535 a, 535 b, and 575) can be activated, and the newnumber can be determined using the first total holding force, the firstwafer flatness state, and/or the first wafer curvature for a “partiallyheld” wafer. In a fifth step, the new activated vacuum ports (535 a, 535b, and 575) can provide a new total holding force to the back side ofthe wafer, and a new wafer flatness state and/or a new wafer curvaturemodel can be determined using the new total holding force. For example,when one or more of a new number of holding sensors (536 a, 536 b, and574) are measuring data, the new wafer curvature model can be determinedfor the “partially held” wafer. In a sixth step, the new wafer flatnessstate can be compared to a flatness limit. Then, the fourth, fifth, andsixth steps can be repeated a number of times if the flatness limit isnot met and the wafer can be thermally processed if the flatness limitis met. One or more corrective actions can be performed, when the numberis exceeded.

When substantially all of the vacuum ports (535 a, 535 b, and 575) areproviding the correct force to the backside of the wafer, a uniformthermal processing procedure can be performed on the wafer. For example,uniform wafer curvature model data and/or uniform wafer flatness datacan be determined. When one or more of the vacuum ports (535 a, 535 b,and 575) are not providing the correct force to the backside of thewafer, a non-uniform thermal processing procedure can be performed onthe wafer. For example, non-uniform wafer curvature model data and/ornon-uniform wafer flatness data can be determined. In addition, measureddata from one or more of the holding sensors (536 a and 536 b) can beused.

In some exemplary configurations, the vacuum coupling elements (541 aand 541 b) can include rectangular, flared, and/or cylindrical flowchannels, and the vacuum coupling elements (541 a and 541 b) can flowcontrol and/or measurement devices (not shown).

The thermal processing system 500 can include two thermal controlsystems (550 a and 550 b) that can be coupled to the thermal controlspace 502 inside the first support ring 530 using a plurality of accessports 531 through the first support ring 530 and can provide atemperature control means for the backside of the wafer 501.Alternatively, additional thermal control systems may be required.

A first thermal control systems 550 a can be coupled to a first thermaldistribution element 555 a using a first supply element 551 a, and thefirst thermal distribution element 555 a can be coupled to a pluralityof first temperature control ports 556 a. A second thermal controlsystems 550 b can be coupled to a second thermal distribution element555 b using a second supply element 551 b, and the second thermaldistribution element 555 b can be coupled to a plurality of secondtemperature control ports 556 b. When required, supply elements (551 aand 551 b), thermal distribution elements (555 a and 555 b), and/ortemperature control flow ports (556 a and 556 b), can include controland measurement devices (not shown). Alternatively, other thermalcontrol means may be provided.

In some embodiments, a directed flow 559 can be established between oneor more of the first temperature control flow ports 556 a and one ormore of the second temperature control flow ports 556 b to provide atemperature control means for the backside of the wafer 501. One or moreof the first temperature control flow ports 556 a can provide one ormore thermal control gasses and/or liquids to the process space 506 andthe control space 502 beneath the wafer when a thermal processingprocedure is being performed. In addition, one or more of the secondtemperature control flow ports 556 b can be used to remove one or morethermal control gasses and/or liquids from the process space 506 and thecontrol space 502 beneath the wafer when a thermal processing procedureis being performed. Alternatively, other directed flows may be provided.

One or more of the controllers 590 can be coupled to the first thermalcontrol systems 550 a, the first supply elements 551 a, the firstthermal distribution element 555 a, or the first temperature controlflow ports 556 a, or any combination thereof, and one or more of thecontrollers 590 can be coupled to the second thermal control systems 550b, the second supply elements 551 b, the second thermal distributionelement 555 b, or the second temperature control flow ports 556 b, orany combination thereof. In this manner, one or more of the firsttemperature control flow ports 556 a and/or one or more of the secondtemperature control flow ports 556 b can be used to heat the wafer 501during thermal processing. Control procedures can be performed todetermine which flow ports are being used during operational proceduresor maintenance procedures.

In some procedures, a first set of the first temperature control flowports 556 a and/or a second set of the second temperature control flowports 556 b can be activated when a wafer is held on the first supportring 530 using the vacuum holding elements (532 a and 532 b). When thewafer is held by the first support ring 530, one or more of the vacuumholding elements (532 a and 532 b) can provide a holding force to thebackside of the wafer. When substantially all of the vacuum holdingelements (532 a and 532 b) are providing substantially the same force tothe backside of the wafer, a first wafer flatness state can beestablished, and a first thermal profile can be determined for a “flat”wafer using a first wafer curvature model. In addition, whensubstantially all of the holding sensors (536 a and 536 b) are measuringsubstantially the same data, the wafer can be thermally processed as a“flat” wafer. When one or more of the vacuum holding elements (532 a and532 b) are not providing substantially the same force to the back sideof the wafer, other wafer flatness states can be established, and otherthermal profiles can be determined for a “non-uniform” wafer. Inaddition, when one or more of the holding sensors (536 a and 536 b) arenot measuring substantially the same data, the wafer can be thermallyprocessed as a “non-flat” wafer.

In some exemplary procedures, a first number of the temperature controlflow ports (556 a and 556 b) can be activated when a wafer is held bythe support rings (530 and 570), and a first directed flow can beestablished to the backside of the wafer. For example, the first numberof activated ports can be determined using one or more wafer curvaturemodels. In a second step, temperature profile can be determined for thewafer using one or more of the sensor pins 566 and/or one or more of thelift pins 567 coupled to the backside of the wafer. In the third step,the temperature profile can be compared to one or more limits and afirst thermal uniformity map can be established for the wafer. In afourth step, a new directed flow can be determined and the new directedflow can be determined using the first thermal uniformity map. In afifth step, the new directed flow can be established, a new number ofthe temperature control flow ports (556 a and 556 b) can be activated,and a new thermal uniformity map can be determined. For example, whenone or more of the sensor pins 566 and/or one or more of the lift pins567 are measuring new data, the new thermal uniformity map can bedetermined using the new data. In a sixth step, the new thermaluniformity map can be compared to accuracy limits. Then, the fourth,fifth, and sixth steps can be repeated a number of times if the accuracylimits are not met and the wafer can be removed from the thermalprocessing system if the accuracy limits are met. One or more correctiveactions can be performed, when a number of retries is exceeded.

In other embodiments, one or more of the evacuation systems 520 can beused to remove one or more thermal control gasses and/or liquids fromthe control space 502 beneath the wafer when a thermal processingprocedure is being performed.

In some examples, one or more of the thermal distribution elements (555a and 555 b) can be coupled to the control space 502 through the lowerportion of the support ring. Alternatively, one or more of the thermaldistribution elements (555 a and 555 b) can be coupled to the controlspace 502 through another portion of the support ring. For example, thesupply elements (551 a and 551 b), the thermal distribution elements(555 a and 555 b), and/or the temperature control flow ports (556 a and556 b) can include rectangular, flared, and/or cylindrical flowchannels.

The processing chamber 505 can include a wafer transfer port 509 thatcan be opened during wafer transfer procedures and closed during waferprocessing. In addition, the processing chamber 505 can include a one ormore measurement subsystems 508 that can be configured to providemeasurement data for the processing chamber 505 and/or the wafer 501.

FIG. 6 a and FIG. 6 b show exemplary block diagrams of another thermalprocessing system in accordance with embodiments of the invention. Inthe illustrated embodiment, simplified block diagrams are used forillustration purposes and a simplified thermal processing system 600 isshown that comprises a processing chamber 605, a process gas supplysystem 610, an evacuation system 620, a support ring 630, one or morevacuum systems (640 a, 640 b), one or more thermal control systems (650a, 650 b), a base plate 660, a plurality of support pins 665, aplurality of sensor pins 666, and a plurality of lift pins 667.Alternatively, lift pins 667 may not be required. In addition, thethermal processing system 600 can include one or more controllers 690that can be used to operate and maintain the thermal processing system600.

The thermal processing system 600 can include one or more process gassupply systems 610 coupled to the process space 606 in the processingchamber 605 using one or more flow control elements 615. For example,the flow control elements 615 may comprise one or more valves (notshown) and/or one or more input sensors (not shown). Those skilled inthe art will recognize that one or more nozzles, one or more showerheaddevices, and/or one or more valves may be used for controlling flow inand/or out of the process space 606, and one or more input sensors maybe used for determining the processing state for the thermal processingsystem 600. In addition, one or more of the flow control elements 615may comprise flexible hoses. One or more of the controllers 690 can becoupled to one or more process gas supply systems 610 and the associatedflow control elements 615. The process gas supply systems 610 and theassociated flow control elements 615 can be used to provide processgasses and/or liquids to process space 606. One or more of thecontrollers 690 can be used to control the types of process gases in theprocess space during operational procedures or maintenance procedures.

The thermal processing system 600 can include one or more evacuationsystems 620 coupled to the process space 606 in the processing chamber605 using one or more evacuation port 625. For example, the evacuationport 625 may comprise one or more valves (not shown) and/or one or moreexhaust sensors (not shown). Those skilled in the art will recognizethat one or more pumps and one or more valves may be used forcontrolling flow in and/or out of the process space 606, and one or moreexhaust sensors may be used for determining the processing state for thethermal processing system 600. In addition, one or more of theevacuation ports 625 may be coupled to an evacuation unit (not shown)and/or an exhaust system (not shown) using flexible hoses. Evacuationport 625 can be used to exhaust cleaning and/or other processing gassesthat must be removed from the process space 606. Port diameter can rangefrom approximately 1 mm to approximately 10 mm.

The thermal processing system 600 can include a gas injection system 680coupled to the processing chamber 605 and the controller 690. The gasinjection system 680 can be configured for exposing the support ring630, the base plate 660, the support pins 665, the sensor pins 666,and/or the lift pins 667 to an inert gas stream for rapidly coolingthese components when a wafer 601 is not present in the processingchamber 605. For example, the inert gas can include argon (Ar) ornitrogen (N₂).

One or more of the controllers 690 can be coupled to the evacuationsystems 620 and the associated evacuation ports 625. The evacuationsystems 620 and the associated evacuation ports 625 can be used toremove process gases from the process space 606. One or more of thecontrollers 690 can control the process pressure and/or types of processgases in the process space during operational procedures or maintenanceprocedures using one or more of the evacuation systems 620 and theassociated evacuation ports 625.

The support ring 630 can comprise a plurality of vacuum holding elements(632 a and 632 b) and each vacuum holding element can comprise one ormore vacuum ports (635 a, 635 b) and one or more holding sensors (636 a,636 b). The holding force (vacuum pressure) in each of the vacuumholding elements (632 a and 632 b) can be individually measured andcontrolled. The inside diameter of the support ring 630 can vary fromapproximately 290 mm to approximately 298 mm, the outside diameter ofthe support ring 630 can vary from approximately 305 mm to approximately315 mm. The diameter of the vacuum ports (635 a, 635 b) can vary fromapproximately 2 mm to approximately 5 mm. The length of the sensor pins666 can vary from approximately 2 mm to approximately 10 mm, thediameter of the support pins can vary from approximately 0.15 mm toapproximately 1.0 mm.

The support ring 630 can comprise one or more heating elements 633 thatcan be used to independently control the temperature at the wafer edge.For example, the wafer edge temperature can be independently controlledto eliminate or control the formation of an edge bead.

The base plate 660 can be coupled to an interior surface of theprocessing chamber 605, and the base plate 660 can include one or moretemperature control elements 662 that can be used to quickly raise orlower the temperature of the base plate 660.

The thermal processing system 600 can include a plurality of supportspins 665 and a plurality of sensor pins 666 that can be used to supportthe wafer 601. The plurality of support pins 665 and the plurality ofsensor pins 666 can be coupled to the base plate 660. In one example, acircular configuration may be used. In various embodiments, the sensorpins 666 can include contact sensors, pressure sensors, or temperaturesensors, or any combination thereof. One or more of the controllers 690can be coupled to one or more of the support pins 665 and one or more ofthe sensor pins 666. The sensor pins 666 can be used to determine awafer curvature model for the wafer when the wafer is positioned, andthe wafer curvature model can be used to determine the number, thelocation, and the activation times of one or more of the vacuum holdingelements (632 a and 632 b).

The length of the support pins 665 can vary from approximately 2 mm toapproximately 10 mm, the diameter of the support pins can vary fromapproximately 0.15 mm to approximately 1.0 mm. The length of the sensorpins 666 can vary from approximately 2 mm to approximately 10 mm, thediameter of the support pins can vary from approximately 0.15 mm toapproximately 1.0 mm.

In some examples, the base plate and the support pins 665 can beconfigured to allow the support pins 665 to move in a verticaldirection, and/or the base plate and the sensor pins 666 can beconfigured to allow the sensor pins 666 to move in a vertical direction.For example, the amount of pin movement can be used to determine wafercurvature.

The thermal processing system 600 can include two vacuum systems (640 aand 640 b) that can be coupled to the support ring 630 in differenthalves to provide a holding means for the wafer 601. Alternatively,other holding means may be provided. A first vacuum system 640 a can becoupled to a first distribution module 645 a using a first vacuumcoupling element 641 a. The first distribution module 645 a can becoupled to a first set of vacuum holding elements 632 a control elements646 a using one or more first control elements 646 a. A second vacuumsystem 640 b can be coupled to a second distribution module 645 b usinga second vacuum coupling element 641 b. The second distribution module645 b can be coupled to a second set of vacuum holding elements 632 busing one or more second control elements 646 b. Alternatively, separatevacuum systems may not be required.

One or more of the controllers 690 can be coupled to the first vacuumsystem 640 a, the first vacuum coupling elements 641 a, the firstcontrol elements 646 a, or the first set of vacuum holding elements 632a, or any combination thereof, and one or more of the controllers 690can be coupled to the second vacuum system 640 b, the second vacuumcoupling elements 641 b, the second control elements 646 b, or thesecond set of vacuum holding elements 632 b, or any combination thereof.In this manner, one or more of the first set of vacuum holding elements632 a and/or one or more of the second set of vacuum holding elements632 b can be used to hold the wafer 601 using vacuum techniques. Controlprocedures can be performed to determine which vacuum holding elementsare being used during operational procedures or maintenance procedures.

In some procedures, all of the vacuum holding elements (632 a and 632 b)can be activated when a wafer is positioned above the support ring 630using the lift pins 667. When the wafer is lowered onto the supportring, one or more of the vacuum holding elements (632 a and 632 b) canprovide a holding force to the backside of the wafer. When substantiallyall of the vacuum holding elements (632 a and 632 b) are providingsubstantially the same force to the backside of the wafer, a first waferflatness state can be established, and a first wafer curvature model canbe determined for a “flat” wafer. For example, when substantially all ofthe holding sensors (636 a and 636 b) are measuring substantially thesame data, the first wafer flatness state can be established, and thefirst wafer curvature model can be determined for a “flat” wafer. Whenone or more of the vacuum holding elements (632 a and 632 b) are notproviding substantially the same force to the back side of the wafer,other wafer flatness states can be established, and other wafercurvature models can be determined for a “non-uniform” wafer. Forexample, when one or more of the holding sensors (636 a and 636 b) arenot measuring substantially the same data, the other wafer flatnessstates can be established, and the other wafer curvature models can bedetermined for the “non-flat” wafer.

In other procedures, the other steps can be performed. In a first step,a first number of the vacuum holding elements (632 a and 632 b) can beactivated when a wafer is positioned above the support ring 630 usingthe lift pins 667. For example, the first number can be determined usinga predicted wafer curvature model. In a second step, a wafer can belowered onto the support ring 630, and one or more of the first numberof vacuum holding elements (632 a and 632 b) can provide a holding forceto the backside of the wafer. In the third step, one or more of thefirst number of vacuum holding elements (632 a and 632 b) can provide afirst total holding force to the backside of the wafer, a first waferflatness state and/or a first wafer curvature model can be determinedfor a “partially held” wafer. For example, when one or more of the firstnumber of holding sensors (636 a and 636 b) are measuring substantiallythe same data, the first wafer flatness state can be established for the“partially held” wafer, and the first wafer curvature model can bedetermined for the “partially held” wafer. In a fourth step, a newnumber of the vacuum holding elements (632 a and 632 b) can beactivated, and the new number can be determined using the first wafercurvature model. In a fifth step, one or more of the new number ofvacuum holding elements (632 a and 632 b) can provide a new totalholding force to the back side of the wafer, a new wafer flatness stateand/or a new wafer curvature model can be determined using the new totalholding force. For example, when one or more of the new number ofholding sensors (636 a and 636 b) are measuring data, the new wafercurvature model can be determined for the “partially held” wafer. In asixth step, the new wafer flatness state can be compared to a flatnesslimit. Then, the fourth, fifth, and sixth steps can be repeated a numberof times if the flatness limit is not met and the wafer can be thermallyprocessed if the flatness limit is met. One or more corrective actionscan be performed, when the number is exceeded.

When one or more of the vacuum holding elements (632 a and 632 b) areproviding substantially the same force to the back side of the wafer, auniform thermal processing procedure can be performed on the wafer thatcan be determined using uniform wafer curvature model data and/oruniform wafer flatness state wafer. In addition, measured data from oneor more of the holding sensors (636 a and 636 b) can be used. When oneor more of the vacuum holding elements (632 a and 632 b) are notproviding substantially the same force to the back side of the wafer, anon-uniform thermal processing procedure can be performed on the waferthat can be determined using non-uniform wafer curvature model dataand/or non-uniform wafer flatness state wafer. In addition, measureddata from one or more of the holding sensors (636 a and 636 b) can beused.

In some exemplary configurations, the vacuum coupling elements (641 aand 641 b) can include rectangular, flared, and/or cylindrical flowchannels, and the vacuum coupling elements (641 a and 641 b) can flowcontrol and/or measurement devices (not shown).

The thermal processing system 600 can include two thermal controlsystems (650 a and 650 b) that can be coupled to the thermal controlspace 602 inside the support ring 630 using a plurality of access ports631 through the support ring 630 and can provide a temperature controlmeans for the backside of the wafer 601. Alternatively, additionalthermal control systems may be required.

A first thermal control system 650 a can be coupled to a first thermaldistribution element 655 a using a first supply element 651 a, and thefirst thermal distribution element 655 a can be coupled to a pluralityof first temperature control ports 656 a. A second thermal controlsystem 650 b can be coupled to a second thermal distribution element 655b using a second supply element 651 b, and the second thermaldistribution element 655 b can be coupled to a plurality of secondtemperature control ports 656 b. When required, supply elements (651 aand 651 b), thermal distribution elements (655 a and 655 b), and/ortemperature control flow ports (656 a and 656 b), can include controland measurement devices (not shown). Alternatively, other thermalcontrol means may be provided.

In some embodiments, a directed flow 659 can be established between oneor more of the first temperature control flow ports 656 a and one ormore of the second temperature control flow ports 656 b to provide atemperature control means for the backside of the wafer 601. One or moreof the first temperature control flow ports 656 a can provide one ormore thermal control gasses and/or liquids to the process space 606 andthe control space 602 beneath the wafer when a thermal processingprocedure is being performed. In addition, one or more of the secondtemperature control flow ports 656 b can be used to remove one or morethermal control gasses and/or liquids from the process space 606 and thecontrol space 602 beneath the wafer when a thermal processing procedureis being performed. Alternatively, other directed flows may be provided.

One or more of the controllers 690 can be coupled to the first thermalcontrol system 650 a, the first supply elements 651 a, the first thermaldistribution element 655 a, or the first temperature control flow ports656 a, or any combination thereof, and one or more of the controllers690 can be coupled to the second thermal control system 650 b, thesecond supply elements 651 b, the second thermal distribution element655 b, or the second temperature control flow ports 656 b, or anycombination thereof. In this manner, one or more of the firsttemperature control flow ports 656 a and/or one or more of the secondtemperature control flow ports 656 b can be used to heat the wafer 601during thermal processing. Control procedures can be performed todetermine which flow ports are being used during operational proceduresor maintenance procedures.

In some procedures, a first set of the first temperature control flowports 656 a and/or a second set of the second temperature control flowports 656 a can be activated when a wafer is held on the support ring630 using the vacuum holding elements (632 a and 632 b). When the waferis held by the support ring, one or more of the vacuum holding elements(632 a and 632 b) can provide a holding force to the backside of thewafer. When substantially all of the vacuum holding elements (632 a and632 b) are providing substantially the same force to the backside of thewafer, a first wafer flatness state can be established, and a firstthermal profile can be determined for a “flat” wafer using a first wafercurvature model. In addition, when substantially all of the holdingsensors (636 a and 636 b) are measuring substantially the same data, thewafer can be thermally processed as a “flat” wafer. When one or more ofthe vacuum holding elements (632 a and 632 b) are not providingsubstantially the same force to the back side of the wafer, other waferflatness states can be established, and other thermal profiles can bedetermined for a “non-uniform” wafer. In addition, when one or more ofthe holding sensors (636 a and 636 b) are not measuring substantiallythe same data, the wafer can be thermally processed as a “non-flat”wafer.

In some exemplary procedures, a first number of the temperature controlflow ports (656 a and 656 b) can be activated when a wafer is held bythe support ring 630, and a first directed flow can be established tothe backside of the wafer. For example, the first number of activatedports can be determined using one or more wafer curvature models. In asecond step, temperature profile can be determined for the wafer usingone or more of the sensor pins 666 and/or one or more of the lift pins667 coupled to the backside of the wafer. In the third step, thetemperature profile can be compared to one or more limits and a firstthermal uniformity map can be established for the wafer. In a fourthstep, a new directed flow can be determined and the new directed flowcan be determined using the first thermal uniformity map. In a fifthstep, the new directed flow can be established, a new number of thetemperature control flow ports (656 a and 656 b) can be activated, and anew thermal uniformity map can be determined. For example, when one ormore of the sensor pins 666 and/or one or more of the lift pins 667 aremeasuring new data, the new thermal uniformity map can be determinedusing the new data. In a sixth step, the new thermal uniformity map canbe compared to accuracy limits. Then, the fourth, fifth, and sixth stepscan be repeated a number of times if the accuracy limits are not met andthe wafer can be removed from the thermal processing system if theaccuracy limits are met. One or more corrective actions can beperformed, when a number of retries is exceeded.

In other embodiments, one or more of the evacuation systems 620 can beused to remove one or more thermal control gasses and/or liquids fromthe control space 602 beneath the wafer when a thermal processingprocedure is being performed.

In some examples, one or more of the thermal distribution elements (655a and 655 b) can be coupled to the control space 602 through the lowerportion of the support ring. Alternatively, one or more of the thermaldistribution elements (655 a and 655 b) can be coupled to the controlspace 602 through another portion of the support ring. For example, thesupply elements (651 a and 651 b), the thermal distribution elements(655 a and 655 b), and/or the temperature control flow ports (656 a and656 b) can include rectangular, flared, and/or cylindrical flowchannels.

The processing chamber 605 can include a wafer transfer port 609 thatcan be opened during wafer transfer procedures and closed during waferprocessing. In addition, the processing chamber 605 can include a one ormore measurement subsystems 608 that can be configured to providemeasurement data for the processing chamber 605 and/or the wafer 601.

FIG. 7 a and FIG. 7 b show exemplary block diagrams of another thermalprocessing system in accordance with additional embodiments of theinvention. In the illustrated embodiment, simplified block diagrams areused for illustration purposes and a simplified thermal processingsystem 700 is shown that comprises a processing chamber 705, a processgas supply system 710, an evacuation system 720, a first support ring730, a second support ring 770, one or more vacuum systems (740 a, 740b), one or more thermal control systems (750 a, 750 b), a base plate760, a plurality of support pins 765, a plurality of sensor pins 766,and a plurality of lift pins 767. Alternatively, lift pins 767 may notbe required. In addition, the thermal processing system 700 can includeone or more controllers 790 that can be used to operate and maintain thethermal processing system 700.

The thermal processing system 700 can include one or more process gassupply systems 710 coupled to the process space 706 in the processingchamber 705 using one or more flow control elements 715. For example,the flow control elements 715 may comprise one or more valves (notshown) and/or one or more input sensors (not shown). Those skilled inthe art will recognize that one or more nozzles, one or more showerheaddevices, and/or one or more valves may be used for controlling flow inand/or out of the process space 706, and one or more input sensors maybe used for determining the processing state for the thermal processingsystem 700. In addition, one or more of the flow control elements 715may comprise flexible hoses. One or more of the controllers 790 can becoupled to one or more process gas supply systems 710 and the associatedflow control elements 715. The process gas supply systems 710 and theassociated flow control elements 715 can be used to provide processgasses and/or liquids to process space 706. One or more of thecontrollers 790 can be used to control the types of process gases in theprocess space during operational procedures or maintenance procedures.

The thermal processing system 700 can include one or more evacuationsystems 720 coupled to the process space 706 in the processing chamber705 using one or more evacuation ports 725. For example, the exhaustport 725 may comprise one or more valves (not shown) and/or one or moreexhaust sensors (not shown). Those skilled in the art will recognizethat one or more pumps and one or more valves may be used forcontrolling flow in and/or out of the process space 706, and one or moreexhaust sensors may be used for determining the processing state for thethermal processing system 700. In addition, one or more of theevacuation ports 725 may be coupled to an evacuation unit (not shown)and/or an exhaust system (not shown) using flexible hoses. Evacuationport 725 can be used to exhaust cleaning and/or other processing gassesthat must be removed from the process space 706. Port diameter can rangefrom approximately 1 mm to approximately 10 mm.

The thermal processing system 700 can include a gas injection system 780coupled to the processing chamber 705 and the controller 790. The gasinjection system 780 can be configured for exposing the first supportring 730, the base plate 760, the support pins 765, the sensor pins 766,and/or the lift pins 767 to an inert gas stream for rapidly coolingthese components when a wafer 701 is not present in the processingchamber 705. For example, the inert gas can include argon (Ar) ornitrogen (N₂).

One or more of the controllers 790 can be coupled to the evacuationsystems 720 and the associated evacuation ports 725. The evacuationsystems 720 and the associated evacuation ports 725 can be used toremove process gasses from the process space 706. One or more of thecontrollers 790 can control the process pressure and/or types of processgases in the process space during operational procedures or maintenanceprocedures using one or more of the evacuation systems 720 and theassociated evacuation ports 725.

The first support ring 730 can comprise a plurality of vacuum holdingelements (732 a and 732 b) and each vacuum holding element can compriseone or more vacuum ports (735 a, 735 b) and one or more holding sensors736. The holding force (vacuum pressure) in each of the vacuum holdingelements (732 a and 732 b) can be individually measured and controlled.The inside diameter of the first support ring 730 can vary fromapproximately 290 mm to approximately 298 mm, the outside diameter ofthe first support ring 730 can vary from approximately 305 mm toapproximately 315 mm. The diameter of the vacuum ports (735 a, 735 b)can vary from approximately 2 mm to approximately 7 mm. The length ofthe sensor pins 766 can vary from approximately 2 mm to approximately 10mm, the diameter of the support pins can vary from approximately 0.15 mmto approximately 1.0 mm.

The first support ring 730 can comprise one or more heating elements 733that can be used to independently control the temperature at the waferedge. For example, the wafer edge temperature can be independentlycontrolled to eliminate or control the formation of an edge bead.

The second support ring 770 can comprise a second number of vacuum ports775 and one or more third holding sensors 774. The holding force (vacuumpressure) in the second support ring 770 can be individually measuredand controlled. The inside diameter 772 of the second support ring 770can vary from approximately 4 mm to approximately 6 mm, the outsidediameter 771 of the second support ring 770 can vary from approximately6 mm to approximately 8 mm. The diameter of the vacuum ports 775 canvary from approximately 2 mm to approximately 7 mm. The height of thesecond support ring 770 can vary from approximately 2 mm toapproximately 10 mm.

The base plate 760 can be coupled to an interior surface of theprocessing chamber 705, and the base plate 760 can include one or moretemperature control elements 762 that can be used to quickly raise orlower the temperature of the base plate 760.

The thermal processing system 700 can include a plurality of supportspins 765 and a plurality of sensor pins 766 that can be used to supportthe wafer 701. The plurality of support pins 765 and the plurality ofsensor pins 766 can be coupled to the base plate 760. In one example, arectangular configuration may be used. In various embodiments, thesensor pins 766 can include contact sensors, pressure sensors, ortemperature sensors, or any combination thereof. One or more of thecontrollers 790 can be coupled to one or more of the support pins 765and one or more of the sensor pins 766. The sensor pins 766 can be usedto determine a wafer curvature model for the wafer when the wafer ispositioned, and the wafer curvature model can be used to determine thenumber, the location, and the activation times of one or more of thevacuum holding elements (732 a and 732 b).

The length of the support pins 765 can vary from approximately 2 mm toapproximately 10 mm, the diameter of the support pins can vary fromapproximately 0.15 mm to approximately 1.0 mm. The length of the sensorpins 766 can vary from approximately 2 mm to approximately 10 mm, thediameter of the support pins can vary from approximately 0.15 mm toapproximately 1.0 mm.

In some examples, the base plate 760 and the support pins 765 can beconfigured to allow the support pins 765 to move in a verticaldirection, and/or the base plate and the sensor pins 766 can beconfigured to allow the sensor pins 766 to move in a vertical direction.For example, the amount of pin movement can be used to determine wafercurvature.

The thermal processing system 700 can include two vacuum systems (740 aand 740 b) that can be coupled to the first support ring 730 indifferent halves to provide a holding means for the wafer 701.Alternatively, other holding means may be provided. A first vacuumsystem 740 a can be coupled to a first distribution module 745 a using afirst vacuum coupling element 741 a. The first distribution module 745 acan be coupled to a first set of vacuum holding elements using one ormore first control elements 746 a. A second vacuum system 740 b can becoupled to a second distribution module 745 b using a second vacuumcoupling element 741 b. The second distribution module 745 b can becoupled to a second set of vacuum holding elements 732 b using one ormore second control elements 746 b. Alternatively, separate vacuumsystems may not be required.

In some embodiments, the thermal processing system 700 can include athird vacuum system 740 c that can be coupled to the second support ring770 located in the center portion, and the second support ring 770 canprovide additional holding means for the wafer 701. Alternatively, othersupport rings may be provided. The third vacuum system 740 c can becoupled to a third distribution element 777 using a third vacuumcoupling element 741 c, and the third distribution element 777 can becoupled to the second support ring 770. Alternatively, separate vacuumsystems may not be required.

One or more of the controllers 790 can be coupled to the first vacuumsystem 740 a, the first vacuum coupling elements 741 a, the firstcontrol elements 746 a, or the first set of vacuum holding elements 732a, or any combination thereof, and one or more of the controllers 790can be coupled to the second vacuum system 740 b, the second vacuumcoupling elements 741 b, the second control elements 746 b, or thesecond set of vacuum holding elements 732 b, or any combination thereof.In this manner, one or more of the first set of vacuum holding elements732 a and/or one or more of the second set of vacuum holding elements732 b can be used to hold the wafer 701 using vacuum techniques. Controlprocedures can be performed to determine which vacuum holding elementsare being used during operational procedures or maintenance procedures.

In some procedures, all of the vacuum ports (735 a, 735 b) in the firstsupport ring 730 and all of the vacuum ports 775 in the second supportring 770 can be activated when a wafer is positioned above the firstsupport ring 730 using the lift pins 767. When the wafer is lowered ontothe support ring, one or more of the vacuum ports (735 a, 735 b, and775) can provide a holding force to the backside of the wafer. Whensubstantially all of the vacuum ports (735 a, 735 b, and 775) areproviding substantially the same force to the backside of the wafer, afirst wafer flatness state can be established, and a first wafercurvature model can be determined for a “flat” wafer. For example, whensubstantially all of the holding sensors (736 a, 736 b, and 774) aremeasuring substantially the same data, the first wafer flatness statecan be established, and the first wafer curvature model can bedetermined for a “flat” wafer. When one or more of the vacuum ports (735a, 735 b, and 775) are not providing substantially the same force to theback side of the wafer, other wafer flatness states can be established,and other wafer curvature models can be determined for a “non-uniform”wafer. For example, when one or more of the holding sensors (736 a, 736b, and 774) are not measuring substantially the same data, the otherwafer flatness states can be established, and the other wafer curvaturemodels can be determined for the “non-flat” wafer.

In other procedures, the other steps can be performed. In a first step,a first number of the vacuum ports (735 a, 735 b) in the first supportring 730 and a second number of the vacuum ports 775 in the secondsupport ring 770 can be activated when a wafer is positioned above thesupport rings (730 and 770) using the lift pins 767. For example, thefirst and second numbers can be determined using a predicted wafercurvature model. In a second step, a wafer can be lowered onto thesupport rings (730 and 770), and one or more of the vacuum ports (735 a,735 b, and 775) can provide a holding force to the backside of thewafer. In the third step, the data from one or more of the holdingsensors (736 a, 736 b, and 774) can be used to determine a first totalholding force, a first wafer flatness state, and/or a first wafercurvature for a “partially held” wafer. In a fourth step, a new numberof vacuum ports (735 a, 735 b, and 775) can be activated, and the newnumber can be determined using the first total holding force, the firstwafer flatness state, and/or the first wafer curvature for a “partiallyheld” wafer. In a fifth step, the new activated vacuum ports (735 a, 735b, and 775) can provide a new total holding force to the back side ofthe wafer, and a new wafer flatness state and/or a new wafer curvaturemodel can be determined using the new total holding force. For example,when one or more of a new number of holding sensors (736 a, 736 b, and774) are measuring data, the new wafer curvature model can be determinedfor the “partially held” wafer. In a sixth step, the new wafer flatnessstate can be compared to a flatness limit. Then, the fourth, fifth, andsixth steps can be repeated a number of times if the flatness limit isnot met and the wafer can be thermally processed if the flatness limitis met. One or more corrective actions can be performed, when the numberis exceeded.

When substantially all of the vacuum ports (735 a, 735 b, and 775) areproviding the correct force to the backside of the wafer, a uniformthermal processing procedure can be performed on the wafer. For example,uniform wafer curvature model data and/or uniform wafer flatness datacan be determined. When one or more of the vacuum ports (735 a, 735 b,and 775) are not providing the correct force to the backside of thewafer, a non-uniform thermal processing procedure can be performed onthe wafer. For example, non-uniform wafer curvature model data and/ornon-uniform wafer flatness data can be determined. In addition, measureddata from one or more of the holding sensors (736 a and 736 b) can beused.

In some exemplary configurations, the vacuum coupling elements (741 aand 741 b) can include rectangular, flared, and/or cylindrical flowchannels, and the vacuum coupling elements (741 a and 741 b) can flowcontrol and/or measurement devices (not shown).

The thermal processing system 700 can include two thermal controlsystems (750 a and 750 b) that can be coupled to the thermal controlspace 702 inside the first support ring 730 using a plurality of accessports 731 through the first support ring 730 and can provide atemperature control means for the backside of the wafer 701.Alternatively, additional thermal control systems may be required.

A first thermal control systems 750 a can be coupled to a first thermaldistribution element 755 a using a first supply element 751 a, and thefirst thermal distribution element 755 a can be coupled to a pluralityof first temperature control ports 756 a. A second thermal controlsystems 750 b can be coupled to a second thermal distribution element755 b using a second supply element 751 b, and the second thermaldistribution element 755 b can be coupled to a plurality of secondtemperature control ports 756 b. When required, supply elements (751 aand 751 b), thermal distribution elements (755 a and 755 b), and/ortemperature control flow ports (756 a and 756 b), can include controland measurement devices (not shown). Alternatively, other thermalcontrol means may be provided.

In some embodiments, a directed flow 759 can be established between oneor more of the first temperature control flow ports 756 a and one ormore of the second temperature control flow ports 756 b to provide atemperature control means for the backside of the wafer 701. One or moreof the first temperature control flow ports 756 a can provide one ormore thermal control gasses and/or liquids to the process space 706 andthe control space 702 beneath the wafer when a thermal processingprocedure is being performed. In addition, one or more of the secondtemperature control flow ports 756 b can be used to remove one or morethermal control gasses and/or liquids from the process space 706 and thecontrol space 702 beneath the wafer when a thermal processing procedureis being performed. Alternatively, other directed flows may be provided.

One or more of the controllers 790 can be coupled to the first thermalcontrol systems 750 a, the first supply elements 751 a, the firstthermal distribution element 755 a, or the first temperature controlflow ports 756 a, or any combination thereof, and one or more of thecontrollers 790 can be coupled to the second thermal control systems 750b, the second supply elements 751 b, the second thermal distributionelement 755 b, or the second temperature control flow ports 756 b, orany combination thereof. In this manner, one or more of the firsttemperature control flow ports 756 a and/or one or more of the secondtemperature control flow ports 756 b can be used to heat the wafer 701during thermal processing. Control procedures can be performed todetermine which flow ports are being used during operational proceduresor maintenance procedures.

In some procedures, a first set of the first temperature control flowports 756 a and/or a second set of the second temperature control flowports 756 a can be activated when a wafer is held on the first supportring 730 using the vacuum holding elements (732 a and 732 b). When thewafer is held by the first support ring 730, one or more of the vacuumholding elements (732 a and 732 b) can provide a holding force to thebackside of the wafer. When substantially all of the vacuum holdingelements (732 a and 732 b) are providing substantially the same force tothe backside of the wafer, a first wafer flatness state can beestablished, and a first thermal profile can be determined for a “flat”wafer using a first wafer curvature model. In addition, whensubstantially all of the holding sensors (736 a and 736 b) are measuringsubstantially the same data, the wafer can be thermally processed as a“flat” wafer. When one or more of the vacuum holding elements (732 a and732 b) are not providing substantially the same force to the back sideof the wafer, other wafer flatness states can be established, and otherthermal profiles can be determined for a “non-uniform” wafer. Inaddition, when one or more of the holding sensors (736 a and 736 b) arenot measuring substantially the same data, the wafer can be thermallyprocessed as a “non-flat” wafer.

In some exemplary procedures, a first number of the temperature controlflow ports (756 a and 756 b) can be activated when a wafer is held bythe support rings (730 and 770), and a first directed flow can beestablished to the backside of the wafer. For example, the first numberof activated ports can be determined using one or more wafer curvaturemodels. In a second step, temperature profile can be determined for thewafer using one or more of the sensor pins 766 and/or one or more of thelift pins 767 coupled to the backside of the wafer. In the third step,the temperature profile can be compared to one or more limits and afirst thermal uniformity map can be established for the wafer. In afourth step, a new directed flow can be determined and the new directedflow can be determined using the first thermal uniformity map. In afifth step, the new directed flow can be established, a new number ofthe temperature control flow ports (756 a and 756 b) can be activated,and a new thermal uniformity map can be determined. For example, whenone or more of the sensor pins 766 and/or one or more of the lift pins767 are measuring new data, the new thermal uniformity map can bedetermined using the new data. In a sixth step, the new thermaluniformity map can be compared to accuracy limits. Then, the fourth,fifth, and sixth steps can be repeated a number of times if the accuracylimits are not met and the wafer can be removed from the thermalprocessing system if the accuracy limits are met. One or more correctiveactions can be performed, when a number of retries is exceeded.

In other embodiments, one or more of the evacuation systems 720 can beused to remove one or more thermal control gasses and/or liquids fromthe control space 702 beneath the wafer when a thermal processingprocedure is being performed.

In some examples, one or more of the thermal distribution elements (755a and 755 b) can be coupled to the control space 702 through the lowerportion of the support ring. Alternatively, one or more of the thermaldistribution elements (755 a and 755 b) can be coupled to the controlspace 702 through another portion of the support ring. For example, thesupply elements (751 a and 751 b), the thermal distribution elements(755 a and 755 b), and/or the temperature control flow ports (756 a and756 b) can include rectangular, flared, and/or cylindrical flowchannels.

The processing chamber 705 can include a wafer transfer port 709 thatcan be opened during wafer transfer procedures and closed during waferprocessing. In addition, the processing chamber 705 can include a one ormore measurement subsystems 708 that can be configured to providemeasurement data for the processing chamber 705 and/or the wafer 701.

FIG. 8 illustrates a simplified process flow diagram for a method forusing a thermal processing system according to embodiments of theinvention. Thermal processing procedures can be performed at many pointsduring wafer processing, and the illustrated procedure 800 can beperformed as required during wafer processing.

In 810, a wafer can be positioned on a support surface in a processingchamber, and the support surface can comprise a plurality of supportpins, a plurality of sensor pins, and a plurality of vacuum holdingelements. A wafer transfer system (not shown) can be used to transferthe wafer in and out of the processing chamber using the wafer transferport. In some examples, an alignment procedure can be performed using anotch in the wafer.

In 815, a first wafer curvature model can be determined for the waferusing a first set of sensor pins in contact with a backside surface ofthe wafer.

In 820, a first holding (clamping) procedure can be performed using thefirst wafer curvature model, and the wafer can be coupled to the topsurface of a support ring at a first set of locations using a first setof the vacuum holding elements in the support ring. For example, vacuumtechniques can be used to hold the wafer.

In 825, a new wafer curvature model can be determined for the waferusing a new set of sensor pins in contact with the backside surface ofthe wafer.

In 830, a new holding (clamping) procedure can be performed, and thewafer can be coupled to the top surface of a support ring at a new setof locations using a new set of the vacuum holding elements in thesupport ring.

In 835, a flatness state can be determined for the wafer.

In 840, a query can be performed to determine if the flatness state iswithin a first range. When the flatness state is within a first range,procedure 800 can branch back to 825, and when the flatness state is notwithin the first range, procedure 800 can branch to 845.

In 845, another query can be performed to determine if the flatnessstate is within a second range. When the flatness state is within asecond range, procedure 800 can branch to 850, and when the flatnessstate is not within the second range, procedure 800 can branch to 855.

In 850, the wafer can heated when the flatness state is within thesecond range.

In 855, one or more corrective actions can be performed, when theflatness state is within a third range.

Then, the wafer can be removed from thermal processing system.

One or more of the controllers described herein may be capable ofproviding data to the thermal processing system. The data can includewafer information, layer information, process information, and metrologyinformation. Wafer information can include composition data, size data,thickness data, and temperature data. Layer information can include thenumber of layers, the composition of the layers, and the thickness ofthe layers. Process information can include data concerning previoussteps and the current step. Metrology information can include opticaldigital profile data, such as critical dimension (CD) data, profiledata, and uniformity data, and optical data, such as refractive index(n) data and extinction coefficient (k) data. For example, CD data andprofile data can include information for features and open areas in oneor more layers, and can also include uniformity data. Each controllermay comprise a microprocessor, a memory (e.g., volatile and/ornon-volatile memory), and a digital I/O port. A program stored in thememory may be utilized to control the aforementioned components of athermal processing system according to a process recipe. A controllermay be configured to analyze the process data, to compare the processdata with target process data, and to use the comparison to change aprocess and/or control the processing system components.

In some embodiments, one or more of the support, sensor, and/or liftpins can be removably coupled to the base plate to allow the pins to beremoved, cleaned, and/or replaced during maintenance procedures. Inother embodiments, one or more self-cleaning procedure can be performed.For example, a fully automated self-cleaning process can be implementedto minimize human intervention and potential error. If customer defectlevels require the thermal processing system to be cleaned periodically,this can be programmed to occur. Down time and productivity lost due toPreventative Maintenance (PM) cleaning activities are minimized sincethe fully automated cleaning process/design allows the cleaning cycle tooccur without stopping the entire tool. In addition, since the tool isnot “opened” or disassembled, no post cleaning process testing(verification) is required. Furthermore, maintenance personnel are notexposed to solvent vapors, polymer residues or potential lifting orhandling injuries since the components are not removed and/or cleaned bymaintenance personnel. In other cases, one or more of the thermalprocessing system components may be cleaned using external cleaningprocedures. The self-cleaning frequency and the self-cleaning processcan be programmable and can be executed based on time, number of wafersprocessed or exhaust values (alarm condition or minimum exhaust valuemeasured during processing). Nitrogen or any other gas can also be usedduring a self-cleaning step.

While the present invention has been illustrated by a description ofvarious embodiments and while these embodiments have been described inconsiderable detail, it is not the intention of the applicants torestrict or in any way limit the scope of the appended claims to suchdetail. Additional advantages and modifications will readily appear tothose skilled in the art. The invention in its broader aspects istherefore not limited to the specific details, representative system andmethods, and illustrative examples shown and described. Accordingly,departures may be made from such details without departing from thescope of applicants' general inventive concept.

1. A method of processing a wafer comprising: a) positioning the waferon a support surface in a processing chamber comprising a plurality ofsupport pins, a plurality of sensor pins, and a support ring having aplurality of vacuum holding elements; b) determining a first wafercurvature model for the wafer using a first set of sensor pins incontact with a backside surface of the wafer; c) performing a firstholding procedure using the first wafer curvature model, wherein thewafer is coupled to the support surface at a first holding locationusing at least one of the vacuum holding elements; d) determining a newwafer curvature model for the wafer using a new set of sensor pins incontact with the backside surface of the wafer; e) performing a newholding procedure, wherein the wafer is coupled to the support surfaceat one or more new holding locations using at least one new vacuumholding element; f) determining a flatness state for the wafer; g)repeating steps d)-f) when the flatness state is within a first range;h) heating the wafer when the flatness state is within a second range;and i) performing a corrective action when the flatness state is withina third range.
 2. The method of claim 1, wherein performing the firstholding procedure comprises: c1) identifying a first set of vacuumholding elements covered by the wafer; and c2) providing a holdingpressure at the first set of vacuum holding elements, wherein eachvacuum holding element comprises a plurality of openings having a lowpressure established therein.
 3. The method of claim 1, whereinperforming the new holding procedure comprises: e1) identifying a newset of vacuum holding elements covered by the wafer; and e2) providing anew holding pressure at the new set of vacuum holding elements, whereineach vacuum holding element comprises a plurality of openings having alow pressure established therein.
 4. The method of claim 1, whereinheating the wafer comprises: h1) establishing a vacuum pressure for eachvacuum holding element; and h2) providing a heated gas to a backside ofthe wafer.
 5. The method of claim 1, wherein heating the wafercomprises: h1) establishing a required temperature uniformity map forthe wafer using wafer data, process data, photoresist data, opticaldata, or tool data, or any combination thereof; h2) calculating atemperature uniformity map for the wafer, wherein at least one of thesupport pins comprises one or more temperature sensors configured toprovide backside temperature data for the wafer; h3) determiningdifferences between the required temperature uniformity map and thecalculated temperature uniformity map; and h4) providing thermal energyto a backside of the wafer based on the determined differences.
 6. Themethod of claim 5, wherein the support ring comprises a heaterconfigured to control a wafer edge temperature and to provide firstthermal energy to a wafer edge.
 7. The method of claim 1, whereinperforming the first holding procedure comprises: c1) identifying afirst set of vacuum holding ports covered by the wafer; and c2)providing a holding pressure at the first set of vacuum holding ports,wherein each vacuum holding port comprises an opening having a lowpressure established therein.
 8. The method of claim 1, whereinperforming the first holding procedure comprises: c1) activating a firstset of vacuum holding ports in the support ring; and c2) providing aholding pressure at the first set of vacuum holding ports, wherein eachvacuum holding port comprises an opening having a low pressureestablished therein.
 9. The method of claim 1, wherein performing thefirst holding procedure comprises: c1) activating a first set of vacuumholding ports in the support ring; c2) providing a holding pressure atthe first set of vacuum holding ports, wherein each of the first set ofvacuum holding ports comprise a first opening having a first lowpressure established therein; c3) activating a second set of vacuumholding ports in a second support ring; and c2) providing an additionalholding pressure at the second set of vacuum holding ports, wherein eachof the second set of vacuum holding ports comprises a second openinghaving a second low pressure established therein.
 10. A method ofprocessing a wafer comprising: a) receiving a first wafer and wafer dataassociated with the first wafer; b) determining a first wafer curvaturemodel for the first wafer using the wafer data; c) activating a firstportion of a support surface in a processing chamber, the supportsurface comprising a plurality of support pins, a plurality of sensorpins, and a support ring having a plurality of vacuum holding elements,wherein a first set of the vacuum holding elements is activated, thefirst portion being determined using the first wafer curvature model; d)performing a first holding procedure, wherein the wafer is coupled tothe first portion of the support surface using at least one of the firstset of activated vacuum holding elements; e) determining a new wafercurvature model for the wafer using a set of the sensor pins in contactwith a backside surface of the wafer; f) activating a new portion of thesupport surface in the processing chamber, wherein a new set of thevacuum holding elements is activated, the new portion being determinedusing the new wafer curvature model; g) performing a new holdingprocedure using the new wafer curvature model, wherein the wafer iscoupled to the new portion of the support surface using at least one ofthe new set of activated vacuum holding elements; h) determining aflatness state for the wafer; i) repeating steps e)-h) when the flatnessstate is within a first range; j) heating the wafer when the flatnessstate is within a second range; and k) performing a corrective actionwhen the flatness state is within a third range.
 11. A method ofprocessing a wafer comprising: a) receiving a first wafer and wafer dataassociated with the first wafer; b) determining a first edge bead modelfor the first wafer using the wafer data; c) activating a first portionof a support surface in a processing chamber, the support surfacecomprising a plurality of support pins, a plurality of sensor pins, anda support ring having a plurality of vacuum holding elements, wherein afirst set of the vacuum holding elements is activated, the first portionbeing determined using the first edge bead model; d) performing a firstholding procedure, wherein the wafer is coupled to the first portion ofthe support surface using at least one of the first set of activatedvacuum holding elements; e) determining a new edge bead model for thewafer using a set of the sensor pins in contact with a backside surfaceof the wafer; f) activating a new portion of the support surface in theprocessing chamber, wherein a new set of the vacuum holding elements isactivated, the new portion being determined using the new edge beadmodel; g) performing a new holding procedure using the new edge beadmodel, wherein the wafer is coupled to the new portion of the supportsurface using at least one of the new set of activated vacuum holdingelements; h) determining a flatness state for the wafer; i) repeatingsteps e)-h) when the flatness state is within a first range; j) heatingthe wafer when the flatness state is within a second range; and k)performing a corrective action when the flatness state is within a thirdrange.
 12. A method of processing a wafer comprising: a) receiving afirst wafer and wafer data associated with the first wafer; b)determining a first edge bead model for the first wafer using the waferdata; c) activating a first portion of a support surface in a processingchamber, the support surface comprising a plurality of support pins, aplurality of sensor pins, and a support ring having a plurality ofvacuum holding elements, wherein a first set of the vacuum holdingelements is activated, the first portion being determined using thefirst edge bead model; d) performing a first holding procedure, whereinthe wafer is coupled to the first portion of the support surface usingat least one of the first set of activated vacuum holding elements; e)determining a new edge bead model for the wafer using a set of thesensor pins in contact with a backside surface of the wafer; f)activating a new portion of the support surface in the processingchamber, wherein a new set of the vacuum holding elements is activated,the new portion being determined using the new edge bead model; g)performing a new holding procedure using the new edge bead model,wherein the wafer is coupled to the new portion of the support surfaceusing at least one of the new set of activated vacuum holding elements;h) determining a flatness state for a wafer edge; i) repeating stepse)-h) when the flatness state is within a first range; j) heating thewafer when the flatness state is within a second range; and k)performing a corrective action when the flatness state is within a thirdrange.